data sheet semiconductor http://www.yeashin.com 1 rev.01 20140506 YSESD9D5.0ct5g h transient voltage suppressors for esd protection general description the y sesd9d5.0ct5 is designed to protect voltage sensitive components from esd and transient voltage events. excellent clamping capability, low leakage, and fast response time, make these parts ideal for esd protection on designs wher e board space is at a premium. because of its small size, it is suited for use in cellular phones, mp3 players, digital cameras and many other portable applications where board space is at a premium. applications z cellular phones z portable devices z digital cameras z power supplies features z small body outline dimensions z low body height z peak power up to 150 watts @ 8 x 20 s pulse z low leakage current z response time is typically < 1 ns z esd rating of class 3 (> 16 kv) per human body model z iec61000 ? 4 ? 2 level 4 esd protection z iec61000 ? 4 ? 4 level 4 eft protection sod-923 absolute ratings (t amb =25c ) symbol parameter value units p pp peak pulse power (t p = 8/20 s) 150 w t l maximum lead temperature for soldering during 10s 260 c t stg storage temperature range -55 to +155 c t op operating temperature range -40 to +125 c t j maximum junction temperature 150 c iec61000-4-2 (esd) air discharge 15 kv contact discharge 8 iec61000-4-4 (eft) 40 a esd voltage per human body model 16 kv g we declare that the material of product compliance with rohs requirements. shipping 8000/tape&reel ordering information device marking c z s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. YSESD9D5.0ct5g
http://www.yeashin.com 2 rev.01 20140506 YSESD9D5.0ct5g device characteristics symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm i t test current v br breakdown voltage @ i t electrical characteristics ratings at 25c ambient temperature unless ot herwise specified.vf = 0.9v at if = 10ma v rwm (v) i r1 (ua) @ v rwm v br (v)@ i t (note 1) i t v c (v) @ i pp =5 a* v c (v) @ max i pp * i pp (a)* p pk (w)* c (pf) device max max min ma typ max max max typ 5.0 0.5 5.6 1.0 11.6 18.6 9.4 174 15 *surge current waveform per figure 1. 1. v br is measured with a pulse test current i t at an ambient temperature of 25 ? fig1. pulse waveform fig2.power derating curve YSESD9D5.0ct5g i r2 (ua) r max 0.3 =3.5v @ v
http://www.yeashin.com 3 rev.01 20140506 YSESD9D5.0ct5g package outline & dimensions sod?923 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. dim min nom max millimeters a 0.34 0.37 0.40 b 0.15 0.20 0.25 c 0.07 0.12 0.17 d 0.75 0.80 0.85 e 0.55 0.60 0.65 0.95 1.00 1.05 l 0.05 0.10 0.15 h e 0.013 0.015 0.016 0.006 0.008 0.010 0.003 0.005 0.007 0.030 0.031 0.033 0.022 0.024 0.026 0.037 0.039 0.041 0.002 0.004 0.006 min nom max inches d e b c a l 2x ?y? ?x? 0.08 (0.0032) xy h e 0.40 0.30 0.90 dimensions: millimeters soldering footprint* 2 1
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